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| PRELIMINARY SOLID STATE DEVICES, INC. 14830 Valley View Av. * La Mirada, Ca 90670 Phone: (562) 404-7855 * Fax: (562) 404-1773 SFF50N20M SFF50N20Z 50 AMPS 200 VOLTS 0.055 S N-CHANNEL POWER MOSFET TO-254 (M) TO-254Z (Z) DESIGNER'S DATA SHEET FEATURES: Rugged construction with polysilicon gate Low RDS (on) and high transconductance Excellent high temperature stability Very fast switching speed Fast recovery and superior dv/dt performance Increased reverse energy capability Low input and transfer capacitance for easy paralleling Hermetically sealed package TX, TXV, and Space Level screening available Replaces: IXTH50N20 Types MAXIMUM RATINGS CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Operating and Storage Temperature Thermal Resistance, Junction to Case Total Device Dissipation CASE OUTLINE: TO-254 (Sufix M) @ TC = 25oC @ TC = 55oC SYMBOL VDS VGS ID Top & Tstg R2JC PD VALUE 200 20 50 -55 to +150 0.83 150 114 o UNIT Volts Volts Amps o C C/W Watts CASE OUTLINE: TO-254Z (Sufix Z) NOTE: All specifications are subject to change without notification. SCDs for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00129E SFF50N20M SFF50N20Z RATING Drain to Source Breakdown Voltage (VGS =0 V, ID =250:A) Drain to Source ON State Resistance (VGS = 10 V, 60% of Rated ID) ON State Drain Current (VDS > ID(on) x RDS(on) Max, VGS = 10 V) Gate Threshold Voltage (VDS =VGS, ID = 4mA) Forward Transconductance (VDS > ID(on) x RDS (on) Max, IDS = 50% rated ID) Zero Gate Voltage Drain Current VDS = max rated Voltage, TA = 25oC (VGS = 0V) VDS = 80% rated VDS, TA = 125oC Gate to Source Leakage Forward Gate to Source Leakage Reverse PRELIMINARY SOLID STATE DEVICES, INC. 14830 Valley View Av. * La Mirada, Ca 90670 Phone: (562) 404-7855 * Fax: (562) 404-1773 ELECTRICAL CHARACTERISTICS @ TJ =25oC (Unless Otherwise Specified) SYMBOL BVDSS RDS(on) ID(on) VGS(th) gfs MIN 200 50 2.0 20 TYP 25 190 35 95 28 33 110 30 1.5 4400 800 285 MAX 0.055 4.0 250 1000 +100 -100 220 50 120 35 40 130 35 1.50 225 UNIT V S A V S(E) IDSS IGSS Qg Qgs Qgd td (on) tr td (off) tf VSD :A nA nC At rated VGS VGS = 10 V 50% rated VDS 50% rated ID VDD =50% rated VDS 50% rated ID RG = 6.2 S VGS = 10V Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off Delay Time Fall Time Diode Forvard Voltage (IS = rated ID, VGS = 0V, TJ = 25oC) Diode Reverse Recovery Time Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance NOTES: nsec V nsec :C pF TJ =25oC IF = 10A di/dt = 100A/:sec VGS =0 Volts VDS =25 Volts f =1 MHz trr QRR Ciss Coss Crss |
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